J112 Fet

Type Designator: J111

Type of Transistor: JFET

Type of Control Channel: N -Channel

August 2012J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112SB51338 / MMBFJ113N-Channel SwitchFeatures This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Source & Drain are interchangeable.MMBFJ111J111 MMBFJ112J112 MMBFJ112SB51338J113 MMBFJ113GSSOT-23G.

J112 Jfet For Sale

J111, J112 JFET Chopper Transistors N−Channel — Depletion. Principle determinant of other J-FET characteristics. Figure 10 shows the relationship of Gate−Source Off Voltage (VGS(off) and Drain−Source On Resistance (rds(on)) to I DSS. Most of the devices will be within ±10%.
Buy J112 JFET N-Channel Chopper Transistor 35V 50mA TO-92 Package online at lowest price in India with best quality only on ElectronicsComp.com. Purchase now with Free Shipping and COD option.

Maximum Power Dissipation (Pd): 0.4 W

Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The white optocoupler switches the FET mutes and provides GND or -12V to the FET gates. These are J112 and they work very well. More on this build part of my experiments sometime later. Leave a comment posted in Uncategorized. March 28, 2012 Layout. By michael chollet.

Maximum Drain-Source Voltage |Vds|: 35 V

Maximum Drain Current |Id|: 0.05 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 3 pF

Maximum Drain-Source On-State Resistance (Rds): 30 Ohm

Package: TO92

J111 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

J111 Datasheet (PDF)

0.1. j111 j112 j113 cnv.pdf Size:31K _philips

DISCRETE SEMICONDUCTORSDATA SHEETJ111; J112; J113N-channel silicon field-effecttransistorsJuly 1993Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors J111; J112; J113DESCRIPTIONSymmetrical silicon n-channeljunction FETs in plastic TO-92envelopes. They are intended forapp

0.2. pmbfj111 pmbfj112 pmbfj113.pdf Size:47K _philips

PMBFJ111; PMBFJ112;PMBFJ113N-channel junction FETsRev. 03 4 August 2004 Product data sheet1. Product profile1.1 General descriptionSymmetrical N-channel junction FETs in a SOT23 package.1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (

0.3. pmbfj111 pmbfj112 pmbfj113 cnv 2.pdf Size:32K _philips

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ111;PMBFJ112; PMBFJ113N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ111;N-channel junction FETsPMBFJ112; PMBFJ113FEATURES High-speed switching Interchangeability of drain andsource connections3handbook, halfpage Low

0.4. ssm3j111tu.pdf Size:255K _toshiba

J112 Fet Circuit

SSM3J111TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J111TU High Speed Switching Applications Unit: mm 2.5V drive 2.10.1 Low on-resistance: Ron = 480m (max) (@VGS = -4 V) 1.70.1Ron = 680m (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) 132Characteristic Symbol Rating UnitDrain-Source voltage VDS -20 VGate-Source vol

0.5. mmbfj111 mmbfj112 mmbfj113.pdf Size:151K _fairchild_semi

August 2012J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113N-Channel SwitchFeatures This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Source & Drain are interchangeable.MMBFJ111J111 MMBFJ112J112 MMBFJ112_SB51338J113 MMBFJ113GSSOT-23G TO-92 Mark

0.6. j111 j112 j113 mmbfj111 mmbfj112 mmbfj113.pdf Size:488K _fairchild_semi

J111 MMBFJ111J112 MMBFJ112J113 MMBFJ113GSG TO-92S SOT-23 DDMark: 6P / 6R / 6SNOTE: Source & Drain are interchangeableN-Channel SwitchThis device is designed for low level analog switching, sampleand hold circuits and chopper stabilized amplifiers. Sourcedfrom Process 51.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVDG D

0.7. j111 j112 j113 sst111 sst112 sst113.pdf Size:52K _vishay

J/SST111 SeriesVishay SiliconixN-Channel JFETsJ111 SST111J112 SST112J113 SST113PRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)J/SST111 3 to 10 30 5 4J/SST112 1 to 5 50 5 4J/SST113 v3 100 5 4FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 111

0.8. j111 j112.pdf Size:85K _onsemi

J111, J112JFET Chopper TransistorsN-Channel DepletionFeatureshttp://onsemi.com Pb-Free Packages are Available*1 DRAINMAXIMUM RATINGSRating Symbol Value Unit3Drain-Gate Voltage VDG -35 VdcGATEGate -Source Voltage VGS -35 VdcGate Current IG 50 mAdc2 SOURCETotal Device Dissipation @ TA = 25C PD 350 mWDerate above = 25C 2.8 mW/CLead Temperature TL 300

Datasheet: IXTZ35N25MB, IXTZ42N20MA, IXTZ42N20MB, IXTZ67N10MA, IXTZ67N10MB, J108, J109, J110, IRF3710, J112, J113, J211, J212, JANSR2N7272, JANSR2N7275, JANSR2N7278, JANSR2N7292.

LIST

Last Update

Type Designator: J112

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.4 W

Maximum Drain-Source Voltage |Vds|: 35 V

Maximum Drain Current |Id|: 0.05 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 3 pF

Maximum Drain-Source On-State Resistance (Rds): 30 Ohm

Package: TO92

J112 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

J112 Datasheet (PDF)

0.1. j112 j112rev0.pdf Size:110K _motorola

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby J112/DJFET Chopper TransistorN Channel Depletion1 DRAINJ1123GATE2 SOURCEMAXIMUM RATINGSRating Symbol Value Unit1

0.2. j111 j112 j113 cnv.pdf Size:31K _philips

0.3. pmbfj111 pmbfj112 pmbfj113.pdf Size:47K _philips

J112 Jfet Equivalent

0.4. pmbfj111 pmbfj112 pmbfj113 cnv 2.pdf Size:32K _philips

0.5. ssm3j112tu.pdf Size:136K _toshiba

SSM3J112TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J112TU High Speed Switching Applications Unit: mm 4V drive2.10.1 Low on-resistance: Ron = 790m (max) (@VGS = -4 V) 1.70.1Ron = 390m (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta = 25C) 1Characteristic Symbol Rating Unit32Drain-Source voltage VDS -30 VGate-Source volta

0.6. mmbfj111 mmbfj112 mmbfj113.pdf Size:151K _fairchild_semi

0.7. j111 j112 j113 mmbfj111 mmbfj112 mmbfj113.pdf Size:488K _fairchild_semi

0.8. j111 j112 j113 sst111 sst112 sst113.pdf Size:52K _vishay

0.9. j111 j112.pdf Size:85K _onsemi

0.10. hj112.pdf Size:58K _hsmc

Spec. No. : HE6030HI-SINCERITYIssued Date : 1998.07.01Revised Date : 2005.07.14MICROELECTRONICS CORP.Page No. : 1/5HJ112NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HJ112 is designed for use in general purpose amplifier and low-speedswitching applications.TO-252Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ...........................

Datasheet: IXTZ42N20MA, IXTZ42N20MB, IXTZ67N10MA, IXTZ67N10MB, J108, J109, J110, J111, IRFZ34N, J113, J211, J212, JANSR2N7272, JANSR2N7275, JANSR2N7278, JANSR2N7292, JANSR2N7294.

J-fet J112

J112 Fet

LIST

Last Update

J112 Fet

Hunterlo276

J112 Fet

J112 Jfet For Sale

J111 Datasheet (PDF)

J112 Fet Circuit

LIST

Last Update

J112 Datasheet (PDF)

J112 Jfet Equivalent

J-fet J112

J112 Fet

LIST

Last Update

J112 Fet

J112 Fet Transistor