Type Designator: 2SK3878
Marking Code: K3878
Type of Transistor: MOSFET
The K3878 is a three-terminal silicon device with current conduction capability of 9A, fast switching speed, low on-state resistance, breakdown voltage rating of 900V, and max. Threshold voltage of 4 volts.They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control circuits,UPS, switching regulator and general purpose switching applications.
2SK3878 Datasheet (PDF) 0.1. 2sk3878.pdf Size:205K toshiba. 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (- MOSIV) 2SK3878 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 (typ.) High forward transfer admittance: Yfs = 7.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10. K3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV).
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 60 nC
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 190 pF
Maximum Drain-Source On-State Resistance (Rds): 1.3 Ohm
Package: SC65TO3P
2SK3878 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3878 Datasheet (PDF)
0.1. 2sk3878.pdf Size:205K _toshiba
2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (- MOSIV) 2SK3878 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 (typ.) High forward transfer admittance: Yfs = 7.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
0.2. 2sk3878.pdf Size:216K _inchange_semiconductor
isc N-Channel Mosfet Transistor 2SK3878FEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.3(Max)DS(on)Avalanche Energy SpecifiedFast SwitchingSimple Drive RequirementsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for a
8.1. 2sk3879.pdf Size:292K _toshiba
2SK3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV) 2SK3879 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 640 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolu
8.2. 2sk3875-01.pdf Size:101K _fuji
2SK3875-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407FUJI POWER MOSFETSuper FAP-G SeriesFeaturesHigh speed switching, Low on-resistanceLow driving power, Avalanche-proofNo secondary breakdownApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless other
8.3. 2sk3871-01mr.pdf Size:96K _fuji
2SK3871-01MRN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220FFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25
8.4. 2sk3874-01r.pdf Size:109K _fuji
2SK3874-01RN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless o
8.5. 2sk3876-01r.pdf Size:100K _fuji
2SK3876-01RN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407FUJI POWER MOSFETSuper FAP-G SeriesFeaturesHigh speed switching, Low on-resistanceLow driving power, Avalanche-proofNo secondary breakdownApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless othe
8.6. 2sk3872-01l-s-sj.pdf Size:153K _fuji
2SK3872-01L,S,SJN-CHANNEL SILICON POWER MOSFET200406Outline Drawings (mm)FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistanceSee to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings
8.7. 2sk3870-01.pdf Size:95K _fuji
2SK3870-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220ABFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C
8.8. 2sk3873-01.pdf Size:112K _fuji
2SK3873-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407FUJI POWER MOSFETSuper FAP-G SeriesFeaturesHigh speed switching, Low on-resistanceLow driving power, Avalanche-proofNo secondary breakdownApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless other
8.9. 2sk387.pdf Size:235K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK387DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed applications.such as off-line switching power supplies , UPS,AC and DCmotor controls,rel
Datasheet: 2SK3757, 2SK3766, 2SK3767, 2SK3798, 2SK3799, 2SK3842, 2SK3843, 2SK3845, 2SK4106, 2SK3880, 2SK3940, 2SK4003, 2SK4013, 2SK4014, 2SK4017, 2SK4023, 2SK4026.
Transistor Fet K3878
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| Номер произв | K3878 | ||||
| Описание | Field Effect Transistor | ||||
| Производители | Toshiba | ||||
| логотип | |||||
1Page
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Symbol Unit Drain-gate voltage (RGS = 20 kΩ) Drain current Pulse (Note 1) Single pulse avalanche energy Avalanche current Channel temperature VDSS VGSS IDP EAS EAR Tstg 900 9 150 9 150 V V W A °C 1. GATE 3. SOURCE ― SC-65 2−16C1B Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Characteristic Max Unit Thermal resistance, channel to ambient Rth (ch-a) 50 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C Note 2: VDD = 90 V, Tch = 25°C, L = 17.6 mH, RG = 25 Ω, IAR = 9 A Note 3: Repetitive rating: pulse width limited by max junction temperature This transistor is an electrostatic-sensitive device. Handle with care. 2 1 2010-05-06
Electrical Characteristics (Ta = 25°C) Gate leakage current Drain cutoff current Gate threshold voltage Forward transfer admittance Reverse transfer capacitance Rise time Turn-on time Turn-off time Test Condition IGSS IDSS Vth ⎪Yfs⎪ Crss VGS = ±30 V, VDS = 0 V VDS = 720 V, VGS = 0 V VDS = 10 V, ID = 1 mA VDS = 15 V, ID = 4 A ⎯ ⎯ ±10 ⎯ 900 ⎯ 2.0 ⎯ 4.0 3.5 7.0 ⎯ 2200 ⎯ ⎯ 190 ⎯ V V Ω pF VG1S0 V tf ID = 4 A VOUT RL = 100 Ω ⎯ 20 ⎯ toff Duty ≤ 1%, tw = 10 μs Total gate charge Gate-source charge Qg Qgd ⎯ 34 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Continuous drain reverse current (Note 1) (Note 1) Reverse recovery time Symbol IDRP trr Test Condition ⎯ IDR = 9 A, VGS = 0 V, Min Typ. Max Unit ⎯ ⎯ 27 A ⎯ 1.4 ⎯ μs Marking K3878 Lot No. Note 4: A line under a Lot No. identifies the indication of product Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Free Datasheet http://www.datasheet4u.com/
10 Tc = 25°C 8 15 6 5.25 4.75 0 DRAIN−SOURCE VOLTAGE VDS (V) ID – VDS COMMON SOURCE PULSE TEST 12 15 6 45 0 DRAIN−SOURCE VOLTAGE VDS (V) 20 VDS = 20 V 16 8 4 0 2 4 6 8 10 VDS – VGS COMMON SOURCE PULSE TEST 12 8 4 0 GATE−SOURCE VOLTAGE VGS (V) 100 VDS = 20 V 10 100 1 DRAIN CURRENT ID (A) RDS (ON) − ID COMMON SOURCE PULSE TEST 1 1 DRAIN CURRENT ID (A) Free Datasheet http://www.datasheet4u.com/ | |||||
| Всего страниц | 6 Pages | ||||
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